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Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration: Figs. 1a, 1b and 5

Engelmann, Hans-Jürgen

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@misc{engelmann_hans_jurgen_2021_807,
  author       = {Engelmann, Hans-Jürgen},
  title        = {{Sub-20 nm multilayer nanopillar patterning for 
                   hybrid SET/CMOS integration: Figs. 1a, 1b and 5}},
  month        = feb,
  year         = 2021,
  doi          = {10.14278/rodare.807},
  url          = {https://doi.org/10.14278/rodare.807}
}
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Publication date:
February 9, 2021
DOI:
10.14278/rodare.807

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10.14278/rodare.807

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Grants:
European Commission:
  • IONS4SET - Ion-irradiation-induced Si Nanodot Self-Assembly for Hybrid SET-CMOS Technology (688072)
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-32276
Referenced by:
10.1016/j.mne.2020.100074, https://www.hzdr.de/publications/Publ-32129
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License (for files):
Creative Commons Attribution 4.0 International

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Engelmann, Hans-Jürgen. (2021, February 9). Sub-20 nm multilayer nanopillar patterning for hybrid SET/CMOS integration: Figs. 1a, 1b and 5. Rodare. http://doi.org/10.14278/rodare.807
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