Dataset Open Access
High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity
Godoy Perez, Guillermo Fernando;
Rebohle, Lars;
Kentsch, Ulrich;
Chang, Guo-En;
Zhou, Shengqiang;
Yu, Ing-Song;
Fischer, Inga A.;
Berkmann, Fritz;
Berencen, Yonder
Origin and excel files used for data processing and visualisation of the different characterisation techniques performed (Raman, RBS, XRD, Hall Effect) of the processed GeSn material.
Files
(36.2 MB)
| Name | Size | |
|---|---|---|
|
Contributions graph.opju
md5:ca3bb48513bde2214d99cda687fea016 |
131.5 kB | Download |
|
Hall Effect.opju
md5:a589fb83079e00f0d5a71835109cffd1 |
183.8 kB | Download |
|
Hall Effect.xlsx
md5:7582aacee57bf8d325853891f6a27116 |
35.8 kB | Download |
|
Raman.opju
md5:06c0f641b878b7b705a672f09d91d62c |
865.8 kB | Download |
|
RBS.opju
md5:afac9e33e0418345d776245c5667870b |
974.4 kB | Download |
|
RSM 224.opju
md5:318ede5625b4b48d81ce7c0c4a6d4b54 |
32.5 MB | Download |
|
SIMNRA Fitting.xnra
md5:38d7891104da06d128674ccf56cfdbf6 |
652.3 kB | Download |
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SRIM.opju
md5:28c04b9aa0257c05f40fedc7ca6df0ed |
239.4 kB | Download |
|
XRD 004.opju
md5:c22da7dd89c3ed83e008b949e05f2f8b |
599.4 kB | Download |
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views
downloads
| All versions | This version | |
|---|---|---|
| Views | 41 | 41 |
| Downloads | 50 | 50 |
| Data volume | 502.6 MB | 502.6 MB |
| Unique views | 35 | 35 |
| Unique downloads | 40 | 40 |
- Publication date:
- August 19, 2026
- DOI:
-
- Keyword(s):
- GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
- Related identifiers:
- Cites:
10.17815/jlsrf-3-159 - Identical to:
https://www.hzdr.de/publications/Publ-43591 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International