High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

doi:10.14278/rodare.4962

August 19, 2026 Dataset Open Access

High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

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Publication date:

August 19, 2026

DOI:

Keyword(s):

GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering

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Cites:
10.17815/jlsrf-3-159

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https://www.hzdr.de/publications/Publ-43591

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High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

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High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

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