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High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

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Publication date:
August 19, 2026
DOI:
10.14278/rodare.4962

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10.14278/rodare.4962

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Keyword(s):
GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-43591
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License (for files):
Creative Commons Attribution 4.0 International

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Version 2 10.14278/rodare.5003 Aug 19, 2026
Version 1 10.14278/rodare.4962 Aug 19, 2026
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