Dataset Open Access
High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity
Godoy Perez, Guillermo Fernando;
Rebohle, Lars;
Kentsch, Ulrich;
Chang, Guo-En;
Zhou, Shengqiang;
Yu, Ing-Song;
Fischer, Inga A.;
Berkmann, Fritz;
Berencen, Yonder
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| All versions | This version | |
|---|---|---|
| Views | 287 | 166 |
| Downloads | 256 | 146 |
| Data volume | 1.6 GB | 963.3 MB |
| Unique views | 258 | 145 |
| Unique downloads | 197 | 102 |
- Publication date:
- August 19, 2026
- DOI:
-
- Keyword(s):
- GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
- Related identifiers:
- Cites:
10.17815/jlsrf-3-159 - Identical to:
https://www.hzdr.de/publications/Publ-43591 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International