Dataset Open Access

High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

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{
  "author": [
    {
      "family": "Godoy Perez, Guillermo Fernando"
    }, 
    {
      "family": "Rebohle, Lars"
    }, 
    {
      "family": "Kentsch, Ulrich"
    }, 
    {
      "family": "Chang, Guo-En"
    }, 
    {
      "family": "Zhou, Shengqiang"
    }, 
    {
      "family": "Yu, Ing-Song"
    }, 
    {
      "family": "Fischer, Inga A."
    }, 
    {
      "family": "Berkmann, Fritz"
    }, 
    {
      "family": "Berencen, Yonder"
    }
  ], 
  "publisher": "Rodare", 
  "issued": {
    "date-parts": [
      [
        2026, 
        8, 
        19
      ]
    ]
  }, 
  "title": "High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity", 
  "abstract": "<p>Origin and excel files used for data processing and visualisation of the different characterisation techniques performed (Raman, RBS, XRD, Hall Effect) of the processed GeSn material.</p>", 
  "id": "4962", 
  "type": "dataset", 
  "DOI": "10.14278/rodare.4962"
}
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Publication date:
August 19, 2026
DOI:
10.14278/rodare.4962

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10.14278/rodare.4962

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Keyword(s):
GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-43591
Communities:
License (for files):
Creative Commons Attribution 4.0 International

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Version 1 10.14278/rodare.4962 Aug 19, 2026
Cite all versions? You can cite all versions by using the DOI 10.14278/rodare.4961. This DOI represents all versions, and will always resolve to the latest one. Read more.

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