August 19, 2026 Dataset Open Access

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

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<?xml version='1.0' encoding='utf-8'?>
<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Godoy Perez, Guillermo Fernando</dc:creator>
  <dc:creator>Rebohle, Lars</dc:creator>
  <dc:creator>Kentsch, Ulrich</dc:creator>
  <dc:creator>Chang, Guo-En</dc:creator>
  <dc:creator>Zhou, Shengqiang</dc:creator>
  <dc:creator>Yu, Ing-Song</dc:creator>
  <dc:creator>Fischer, Inga A.</dc:creator>
  <dc:creator>Berkmann, Fritz</dc:creator>
  <dc:creator>Berencen, Yonder</dc:creator>
  <dc:date>2026-08-19</dc:date>
  <dc:description>Origin and excel files used for data processing and visualisation of the different characterisation techniques performed (Raman, RBS, XRD, Hall Effect) of the processed GeSn material.</dc:description>
  <dc:identifier>https://rodare.hzdr.de/record/4962</dc:identifier>
  <dc:identifier>10.14278/rodare.4962</dc:identifier>
  <dc:identifier>oai:rodare.hzdr.de:4962</dc:identifier>
  <dc:relation>doi:10.17815/jlsrf-3-159</dc:relation>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-43591</dc:relation>
  <dc:relation>doi:10.14278/rodare.4961</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/fwi</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/ibc</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/rodare</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>GeSn alloys</dc:subject>
  <dc:subject>Ion implantation</dc:subject>
  <dc:subject>Flash lamp annealing</dc:subject>
  <dc:subject>Dopant activation</dc:subject>
  <dc:subject>Non-equilibrium doping</dc:subject>
  <dc:subject>Strain engineering</dc:subject>
  <dc:title>High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity</dc:title>
  <dc:type>info:eu-repo/semantics/other</dc:type>
  <dc:type>dataset</dc:type>
</oai_dc:dc>