Dataset Open Access
High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity
Godoy Perez, Guillermo Fernando;
Rebohle, Lars;
Kentsch, Ulrich;
Chang, Guo-En;
Zhou, Shengqiang;
Yu, Ing-Song;
Fischer, Inga A.;
Berkmann, Fritz;
Berencen, Yonder
BibTeX Export
@misc{godoy_perez_guillermo_fernando_2026_4962,
author = {Godoy Perez, Guillermo Fernando and
Rebohle, Lars and
Kentsch, Ulrich and
Chang, Guo-En and
Zhou, Shengqiang and
Yu, Ing-Song and
Fischer, Inga A. and
Berkmann, Fritz and
Berencen, Yonder},
title = {{High-efficiency phosphorus activation in
Ge0.95Sn0.05 enabled by ion implantation and flash
lamp annealing with preserved alloy integrity}},
month = aug,
year = 2026,
doi = {10.14278/rodare.4962},
url = {https://doi.org/10.14278/rodare.4962}
}
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| Data volume | 2.7 GB | 1.4 GB |
| Unique views | 401 | 209 |
| Unique downloads | 359 | 173 |
- Publication date:
- August 19, 2026
- DOI:
-
- Keyword(s):
- GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
- Related identifiers:
- Cites:
10.17815/jlsrf-3-159 - Identical to:
https://www.hzdr.de/publications/Publ-43591 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International