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High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

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@misc{godoy_perez_guillermo_fernando_2026_4962,
  author       = {Godoy Perez, Guillermo Fernando and
                  Rebohle, Lars and
                  Kentsch, Ulrich and
                  Chang, Guo-En and
                  Zhou, Shengqiang and
                  Yu, Ing-Song and
                  Fischer, Inga A. and
                  Berkmann, Fritz and
                  Berencen, Yonder},
  title        = {{High-efficiency phosphorus activation in 
                   Ge0.95Sn0.05 enabled by ion implantation and flash
                   lamp annealing with preserved alloy integrity}},
  month        = aug,
  year         = 2026,
  doi          = {10.14278/rodare.4962},
  url          = {https://doi.org/10.14278/rodare.4962}
}
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Publication date:
August 19, 2026
DOI:
10.14278/rodare.4962

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10.14278/rodare.4962

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Keyword(s):
GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-43591
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Creative Commons Attribution 4.0 International

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Version 2 10.14278/rodare.5003 Aug 19, 2026
Version 1 10.14278/rodare.4962 Aug 19, 2026
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