August 3, 2022 Dataset Restricted Access

Echresh, Ahmad; Prucnal, Slawomir; Li, Zichao; Hübner, René; Ganss, Fabian; Steuer, Oliver; Bärwolf, Florian; Jazavandi Ghamsari, Shima; Helm, Manfred; Zhou, Shengqiang; Erbe, Artur; Rebohle, Lars; Georgiev, Yordan

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    <subfield code="a">Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing</subfield>
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    <subfield code="a">&lt;p&gt;Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation followed by millisecond rear-side flash lamp annealing was used to produce highly n-type-doped Ge with an electron concentration in the order of 10^19-10^20 cm^{-3}. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNWs contacts to reduce the Schottky barrier height. The two-probe current-voltage measurements on P-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.&lt;/p&gt;</subfield>
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