Dataset Restricted Access
Echresh, Ahmad;
Prucnal, Slawomir;
Li, Zichao;
Hübner, René;
Ganss, Fabian;
Steuer, Oliver;
Bärwolf, Florian;
Jazavandi Ghamsari, Shima;
Helm, Manfred;
Zhou, Shengqiang;
Erbe, Artur;
Rebohle, Lars;
Georgiev, Yordan
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<foaf:name>Rebohle, Lars</foaf:name>
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<foaf:name>Georgiev, Yordan</foaf:name>
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<dct:title>Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing</dct:title>
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<dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2022</dct:issued>
<dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#date">2022-08-03</dct:issued>
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<dct:description><p>Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation followed by millisecond rear-side flash lamp annealing was used to produce highly n-type-doped Ge with an electron concentration in the order of 10^19-10^20 cm^{-3}. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNWs contacts to reduce the Schottky barrier height. The two-probe current-voltage measurements on P-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.</p></dct:description>
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