August 3, 2022 Dataset Restricted Access

Echresh, Ahmad; Prucnal, Slawomir; Li, Zichao; Hübner, René; Ganss, Fabian; Steuer, Oliver; Bärwolf, Florian; Jazavandi Ghamsari, Shima; Helm, Manfred; Zhou, Shengqiang; Erbe, Artur; Rebohle, Lars; Georgiev, Yordan

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        "name": "Echresh, Ahmad", 
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        "name": "Li, Zichao"
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        "affiliation": "HZDR", 
        "name": "H\u00fcbner, Ren\u00e9", 
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        "affiliation": "HZDR", 
        "name": "Ganss, Fabian"
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        "name": "Steuer, Oliver"
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        "affiliation": "IHP\u2013Leibniz-Institut f\u00fcr innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany", 
        "name": "B\u00e4rwolf, Florian"
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        "name": "Jazavandi Ghamsari, Shima"
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        "affiliation": "HZDR", 
        "name": "Helm, Manfred"
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        "affiliation": "HZDR", 
        "name": "Zhou, Shengqiang", 
        "orcid": "0000-0002-4885-799X"
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        "affiliation": "HZDR", 
        "name": "Erbe, Artur", 
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        "name": "Rebohle, Lars", 
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        "name": "Georgiev, Yordan", 
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    "language": "eng", 
    "description": "<p>Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation followed by millisecond rear-side flash lamp annealing was used to produce highly n-type-doped Ge with an electron concentration in the order of 10^19-10^20 cm^{-3}. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNWs contacts to reduce the Schottky barrier height. The two-probe current-voltage measurements on P-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.</p>", 
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    "title": "Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing"
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