August 3, 2022 Dataset Restricted Access

Echresh, Ahmad; Prucnal, Slawomir; Li, Zichao; Hübner, René; Ganss, Fabian; Steuer, Oliver; Bärwolf, Florian; Jazavandi Ghamsari, Shima; Helm, Manfred; Zhou, Shengqiang; Erbe, Artur; Rebohle, Lars; Georgiev, Yordan

DataCite XML Export

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="DOI">10.14278/rodare.1824</identifier>
  <creators>
    <creator>
      <creatorName>Echresh, Ahmad</creatorName>
      <givenName>Ahmad</givenName>
      <familyName>Echresh</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-2708-2718</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Prucnal, Slawomir</creatorName>
      <givenName>Slawomir</givenName>
      <familyName>Prucnal</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-4088-6032</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Li, Zichao</creatorName>
      <givenName>Zichao</givenName>
      <familyName>Li</familyName>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Hübner, René</creatorName>
      <givenName>René</givenName>
      <familyName>Hübner</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-5200-6928</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Ganss, Fabian</creatorName>
      <givenName>Fabian</givenName>
      <familyName>Ganss</familyName>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Steuer, Oliver</creatorName>
      <givenName>Oliver</givenName>
      <familyName>Steuer</familyName>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Bärwolf, Florian</creatorName>
      <givenName>Florian</givenName>
      <familyName>Bärwolf</familyName>
      <affiliation>IHP–Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, 15236 Frankfurt (Oder), Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Jazavandi Ghamsari, Shima</creatorName>
      <givenName>Shima</givenName>
      <familyName>Jazavandi Ghamsari</familyName>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Helm, Manfred</creatorName>
      <givenName>Manfred</givenName>
      <familyName>Helm</familyName>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Zhou, Shengqiang</creatorName>
      <givenName>Shengqiang</givenName>
      <familyName>Zhou</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-4885-799X</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Erbe, Artur</creatorName>
      <givenName>Artur</givenName>
      <familyName>Erbe</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-6368-8728</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Rebohle, Lars</creatorName>
      <givenName>Lars</givenName>
      <familyName>Rebohle</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-8066-6392</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
    <creator>
      <creatorName>Georgiev, Yordan</creatorName>
      <givenName>Yordan</givenName>
      <familyName>Georgiev</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-3146-8031</nameIdentifier>
      <affiliation>HZDR</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing</title>
  </titles>
  <publisher>Rodare</publisher>
  <publicationYear>2022</publicationYear>
  <dates>
    <date dateType="Issued">2022-08-03</date>
  </dates>
  <language>en</language>
  <resourceType resourceTypeGeneral="Dataset"/>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://rodare.hzdr.de/record/1824</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsIdenticalTo">https://www.hzdr.de/publications/Publ-34995</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.14278/rodare.1823</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/fwi</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/ibc</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/rodare</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="info:eu-repo/semantics/restrictedAccess">Restricted Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation followed by millisecond rear-side flash lamp annealing was used to produce highly n-type-doped Ge with an electron concentration in the order of 10^19-10^20 cm^{-3}. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNWs contacts to reduce the Schottky barrier height. The two-probe current-voltage measurements on P-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.&lt;/p&gt;</description>
  </descriptions>
</resource>