August 3, 2022 Dataset Restricted Access

Echresh, Ahmad; Prucnal, Slawomir; Li, Zichao; Hübner, René; Ganss, Fabian; Steuer, Oliver; Bärwolf, Florian; Jazavandi Ghamsari, Shima; Helm, Manfred; Zhou, Shengqiang; Erbe, Artur; Rebohle, Lars; Georgiev, Yordan

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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Echresh, Ahmad</dc:creator>
  <dc:creator>Prucnal, Slawomir</dc:creator>
  <dc:creator>Li, Zichao</dc:creator>
  <dc:creator>Hübner, René</dc:creator>
  <dc:creator>Ganss, Fabian</dc:creator>
  <dc:creator>Steuer, Oliver</dc:creator>
  <dc:creator>Bärwolf, Florian</dc:creator>
  <dc:creator>Jazavandi Ghamsari, Shima</dc:creator>
  <dc:creator>Helm, Manfred</dc:creator>
  <dc:creator>Zhou, Shengqiang</dc:creator>
  <dc:creator>Erbe, Artur</dc:creator>
  <dc:creator>Rebohle, Lars</dc:creator>
  <dc:creator>Georgiev, Yordan</dc:creator>
  <dc:date>2022-08-03</dc:date>
  <dc:description>Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fabricate Ohmic contacts on n-type-doped GeNWs. Phosphorus (P) implantation followed by millisecond rear-side flash lamp annealing was used to produce highly n-type-doped Ge with an electron concentration in the order of 10^19-10^20 cm^{-3}. Electron beam lithography, inductively coupled plasma reactive ion etching, and nickel (Ni) deposition were used to fabricate GeNW-based devices with symmetric Hall bar configuration, which allows detailed electrical characterization of the NWs. Afterward, rear-side flash lamp annealing was applied to form Ni germanide at the Ni-GeNWs contacts to reduce the Schottky barrier height. The two-probe current-voltage measurements on P-doped GeNWs exhibit linear Ohmic behavior. Also, the size-dependent electrical measurements showed that carrier scattering near the NW surfaces and reduction of the effective NW cross-section dominate the charge transport in the GeNWs.</dc:description>
  <dc:identifier>https://rodare.hzdr.de/record/1824</dc:identifier>
  <dc:identifier>10.14278/rodare.1824</dc:identifier>
  <dc:identifier>oai:rodare.hzdr.de:1824</dc:identifier>
  <dc:language>eng</dc:language>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-34995</dc:relation>
  <dc:relation>doi:10.14278/rodare.1823</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/fwi</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/ibc</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/rodare</dc:relation>
  <dc:rights>info:eu-repo/semantics/restrictedAccess</dc:rights>
  <dc:title>Fabrication of highly n-type-doped germanium nanowires and Ohmic contacts using ion implantation and flash lamp annealing</dc:title>
  <dc:type>info:eu-repo/semantics/other</dc:type>
  <dc:type>dataset</dc:type>
</oai_dc:dc>