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Data publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

von Borany, Johannes; Engelmann, Hans-Jürgen; Heinig, Karl-Heinz; Hlawacek, Gregor; Hübner, René; Klüpfel, Fabian; Möller, Wolfhard; Pourteau, Marie-Line; Rademaker, Guido; Rommel, Mathias; Baier, Leander; Pichler, Peter; Tiron, Raluca

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@misc{von_borany_johannes_2022_1805,
  author       = {von Borany, Johannes and
                  Engelmann, Hans-Jürgen and
                  Heinig, Karl-Heinz and
                  Hlawacek, Gregor and
                  Hübner, René and
                  Klüpfel, Fabian and
                  Möller, Wolfhard and
                  Pourteau, Marie-Line and
                  Rademaker, Guido and
                  Rommel, Mathias and
                  Baier, Leander and
                  Pichler, Peter and
                  Tiron, Raluca},
  title        = {{Data publication: CMOS-compatible 
                   manufacturability of sub-15 nm Si/SiO2/Si
                   nanopillars containing single Si nanodots for
                   single electron transistor applications}},
  month        = jul,
  year         = 2022,
  doi          = {10.14278/rodare.1805},
  url          = {https://doi.org/10.14278/rodare.1805}
}
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Publication date:
July 11, 2022
DOI:
10.14278/rodare.1805

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10.14278/rodare.1805

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Keyword(s):
CMOS Single-electron transistor nanostructure fabrication self-organization Silicon nanodot Nanopillars Ion-beam mixing Phase separation
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-34906
Referenced by:
10.1088/1361-6641/acbe5d, https://www.hzdr.de/publications/Publ-34842
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License (for files):
Creative Commons Attribution 4.0 International

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Version 1 10.14278/rodare.1805 Jul 11, 2022
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von Borany, Johannes, Engelmann, Hans-Jürgen, Heinig, Karl-Heinz, Hlawacek, Gregor, Hübner, René, Klüpfel, Fabian, … Tiron, Raluca. (2022). Data publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications [Data set]. Rodare. http://doi.org/10.14278/rodare.1805
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