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Data publication: CMOS-compatible manufacturability of sub-15 nm Si/SiO2/Si nanopillars containing single Si nanodots for single electron transistor applications

von Borany, Johannes; Engelmann, Hans-Jürgen; Heinig, Karl-Heinz; Hlawacek, Gregor; Hübner, René; Klüpfel, Fabian; Möller, Wolfhard; Pourteau, Marie-Line; Rademaker, Guido; Rommel, Mathias; Baier, Leander; Pichler, Peter; Tiron, Raluca

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    <dcat:keyword>Ion-beam mixing</dcat:keyword>
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Publication date:
July 11, 2022
DOI:
10.14278/rodare.1805

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Keyword(s):
CMOS Single-electron transistor nanostructure fabrication self-organization Silicon nanodot Nanopillars Ion-beam mixing Phase separation
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-34906
Referenced by:
10.1088/1361-6641/acbe5d, https://www.hzdr.de/publications/Publ-34842
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