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Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Ratschinski, I.; Nagarajan, S.; Trommer, J.; Luferau, Andrei; Khan, M. B.; Erbe, Artur; Georgiev, Yordan; Mikolajick, T.; Smith, S. C.; König, D.; Hiller, D.


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  <dc:creator>Ratschinski, I.</dc:creator>
  <dc:creator>Nagarajan, S.</dc:creator>
  <dc:creator>Trommer, J.</dc:creator>
  <dc:creator>Luferau, Andrei</dc:creator>
  <dc:creator>Khan, M. B.</dc:creator>
  <dc:creator>Erbe, Artur</dc:creator>
  <dc:creator>Georgiev, Yordan</dc:creator>
  <dc:creator>Mikolajick, T.</dc:creator>
  <dc:creator>Smith, S. C.</dc:creator>
  <dc:creator>König, D.</dc:creator>
  <dc:creator>Hiller, D.</dc:creator>
  <dc:date>2024-01-30</dc:date>
  <dc:description>Measured resistance as a function of nanowire (NW) width for different modulation doped Si NWs.</dc:description>
  <dc:identifier>https://rodare.hzdr.de/record/2716</dc:identifier>
  <dc:identifier>10.14278/rodare.2716</dc:identifier>
  <dc:identifier>oai:rodare.hzdr.de:2716</dc:identifier>
  <dc:relation>doi:10.1002/pssa.202300068</dc:relation>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-38708</dc:relation>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-38707</dc:relation>
  <dc:relation>doi:10.14278/rodare.2715</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/rodare</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>electrical properties</dc:subject>
  <dc:subject>modulation doping</dc:subject>
  <dc:subject>resistance</dc:subject>
  <dc:subject>silicon nanowires</dc:subject>
  <dc:title>Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2</dc:title>
  <dc:type>info:eu-repo/semantics/other</dc:type>
  <dc:type>dataset</dc:type>
</oai_dc:dc>
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