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Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2

Ratschinski, I.; Nagarajan, S.; Trommer, J.; Luferau, Andrei; Khan, M. B.; Erbe, Artur; Georgiev, Yordan; Mikolajick, T.; Smith, S. C.; König, D.; Hiller, D.

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{
  "issued": {
    "date-parts": [
      [
        2024, 
        1, 
        30
      ]
    ]
  }, 
  "DOI": "10.14278/rodare.2716", 
  "author": [
    {
      "family": "Ratschinski, I."
    }, 
    {
      "family": "Nagarajan, S."
    }, 
    {
      "family": "Trommer, J."
    }, 
    {
      "family": "Luferau, Andrei"
    }, 
    {
      "family": "Khan, M. B."
    }, 
    {
      "family": "Erbe, Artur"
    }, 
    {
      "family": "Georgiev, Yordan"
    }, 
    {
      "family": "Mikolajick, T."
    }, 
    {
      "family": "Smith, S. C."
    }, 
    {
      "family": "K\u00f6nig, D."
    }, 
    {
      "family": "Hiller, D."
    }
  ], 
  "publisher": "Rodare", 
  "id": "2716", 
  "type": "dataset", 
  "abstract": "<p>Measured resistance as a function of nanowire (NW) width for different modulation doped Si NWs.</p>", 
  "title": "Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2"
}
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Publication date:
January 30, 2024
DOI:
10.14278/rodare.2716

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10.14278/rodare.2716

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Keyword(s):
electrical properties modulation doping resistance silicon nanowires
Related identifiers:
Identical to:
https://www.hzdr.de/publications/Publ-38708
Referenced by:
10.1002/pssa.202300068, https://www.hzdr.de/publications/Publ-38707
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License (for files):
Creative Commons Attribution 4.0 International

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Version 1 10.14278/rodare.2716 Jan 30, 2024
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