Dataset Open Access
Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2
Ratschinski, I.;
Nagarajan, S.;
Trommer, J.;
Luferau, Andrei;
Khan, M. B.;
Erbe, Artur;
Georgiev, Yordan;
Mikolajick, T.;
Smith, S. C.;
König, D.;
Hiller, D.
Measured resistance as a function of nanowire (NW) width for different modulation doped Si NWs.
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| All versions | This version | |
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| Views | 215 | 215 |
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| Data volume | 146.5 MB | 146.5 MB |
| Unique views | 170 | 170 |
| Unique downloads | 113 | 113 |
- Publication date:
- January 30, 2024
- DOI:
-
- Keyword(s):
- electrical properties modulation doping resistance silicon nanowires
- Related identifiers:
- Identical to:
https://www.hzdr.de/publications/Publ-38708 - Referenced by:
10.1002/pssa.202300068, https://www.hzdr.de/publications/Publ-38707 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International