January 30, 2024 Dataset Open Access

Ratschinski, I.; Nagarajan, S.; Trommer, J.; Luferau, Andrei; Khan, M. B.; Erbe, Artur; Georgiev, Yordan; Mikolajick, T.; Smith, S. C.; König, D.; Hiller, D.

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  <identifier identifierType="DOI">10.14278/rodare.2716</identifier>
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    <creator>
      <creatorName>Ratschinski, I.</creatorName>
      <givenName>I.</givenName>
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      <affiliation>Institute of Applied Physics (IAP), TU Bergakademie Freiberg, Freiberg, 09599, Germany</affiliation>
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      <creatorName>Nagarajan, S.</creatorName>
      <givenName>S.</givenName>
      <familyName>Nagarajan</familyName>
      <affiliation>Nanoelectronic Materials Laboratory gGmbH (NaMLab), Dresden, 01187, Germany</affiliation>
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      <creatorName>Trommer, J.</creatorName>
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      <creatorName>Luferau, Andrei</creatorName>
      <givenName>Andrei</givenName>
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      <creatorName>Erbe, Artur</creatorName>
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      <creatorName>Georgiev, Yordan</creatorName>
      <givenName>Yordan</givenName>
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      <creatorName>Mikolajick, T.</creatorName>
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      <affiliation>Nanoelectronic Materials Laboratory gGmbH (NaMLab), Dresden, 01187, Germany</affiliation>
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      <creatorName>Smith, S. C.</creatorName>
      <givenName>S. C.</givenName>
      <familyName>Smith</familyName>
      <affiliation>Integrated Materials Design Lab (IMDL), Australian National University (ANU), Canberra, ACT 2601, Australia</affiliation>
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      <creatorName>König, D.</creatorName>
      <givenName>D.</givenName>
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      <affiliation>Integrated Materials Design Lab (IMDL), Australian National University (ANU), Canberra, ACT 2601, Australia</affiliation>
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      <creatorName>Hiller, D.</creatorName>
      <givenName>D.</givenName>
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      <affiliation>Institute of Applied Physics (IAP), TU Bergakademie Freiberg, Freiberg, 09599, Germany</affiliation>
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  </creators>
  <titles>
    <title>Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2</title>
  </titles>
  <publisher>Rodare</publisher>
  <publicationYear>2024</publicationYear>
  <subjects>
    <subject>electrical properties</subject>
    <subject>modulation doping</subject>
    <subject>resistance</subject>
    <subject>silicon nanowires</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2024-01-30</date>
  </dates>
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    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsReferencedBy">10.1002/pssa.202300068</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsIdenticalTo">https://www.hzdr.de/publications/Publ-38708</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsReferencedBy">https://www.hzdr.de/publications/Publ-38707</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.14278/rodare.2715</relatedIdentifier>
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  <rightsList>
    <rights rightsURI="https://creativecommons.org/licenses/by/4.0/legalcode">Creative Commons Attribution 4.0 International</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Measured resistance as a function of nanowire (NW) width for different modulation doped Si NWs.&lt;/p&gt;</description>
  </descriptions>
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