Dataset Open Access
Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2
Ratschinski, I.;
Nagarajan, S.;
Trommer, J.;
Luferau, Andrei;
Khan, M. B.;
Erbe, Artur;
Georgiev, Yordan;
Mikolajick, T.;
Smith, S. C.;
König, D.;
Hiller, D.
Measured resistance as a function of nanowire (NW) width for different modulation doped Si NWs.
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| All versions | This version | |
|---|---|---|
| Views | 275 | 275 |
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| Data volume | 158.2 MB | 158.2 MB |
| Unique views | 221 | 221 |
| Unique downloads | 128 | 128 |
- Publication date:
- January 30, 2024
- DOI:
-
- Keyword(s):
- electrical properties modulation doping resistance silicon nanowires
- Related identifiers:
- Identical to:
https://www.hzdr.de/publications/Publ-38708 - Referenced by:
10.1002/pssa.202300068, https://www.hzdr.de/publications/Publ-38707 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International
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Cite as
Ratschinski, I., Nagarajan, S., Trommer, J., Luferau, Andrei, Khan, M. B., Erbe, Artur, … Hiller, D. (2024). Data publication: Significant Resistance Reduction in Modulation-Doped Silicon Nanowires via Aluminum-Induced Acceptor States in SiO2 [Data set]. Rodare. http://doi.org/10.14278/rodare.2716
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