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Data publication: Structural changes in Ge1 xSnx and Si1-x-yGexSny thin films on SOI substrates treated by pulse laser annealing

Steuer, Oliver; Schwarz, Daniel; Oehme, Michael; Bärwolf, Florian; Cheng, Yu; Ganss, Fabian; Hübner, René; Heller, René; Zhou, Shengqiang; Helm, Manfred; Cuniberti, Gianaurelio; Georgiev, Yordan; Prucnal, Slawomir


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  <identifier identifierType="DOI">10.14278/rodare.3086</identifier>
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      <creatorName>Schwarz, Daniel</creatorName>
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      <affiliation>University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany</affiliation>
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      <creatorName>Oehme, Michael</creatorName>
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      <affiliation>University of Stuttgart, Institute of Semiconductor Engineering, Pfaffenwaldring 47, 70569 Stuttgart, Germany</affiliation>
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      <creatorName>Bärwolf, Florian</creatorName>
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      <creatorName>Cuniberti, Gianaurelio</creatorName>
      <givenName>Gianaurelio</givenName>
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      <affiliation>Institute of Materials Science, Technische Universität Dresden, Budapester Str. 27, 01069 Dresden, Germany</affiliation>
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      <creatorName>Georgiev, Yordan</creatorName>
      <givenName>Yordan</givenName>
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      <creatorName>Prucnal, Slawomir</creatorName>
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  <titles>
    <title>Data publication: Structural changes in Ge1 xSnx and Si1-x-yGexSny thin films on SOI substrates treated by pulse laser annealing</title>
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  <publisher>Rodare</publisher>
  <publicationYear>2024</publicationYear>
  <dates>
    <date dateType="Issued">2024-08-14</date>
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    <rights rightsURI="info:eu-repo/semantics/restrictedAccess">Restricted Access</rights>
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  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Messdaten f&amp;uuml;r das Paper&lt;/p&gt;</description>
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