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Si1-x-yGeySnx alloy formation by Sn ion implantation and flash lamp annealing

Steuer, Oliver; Michailow, Michail; Hübner, René; Pyszniak, Krzysztof; Turek, Marcin; Kentsch, Ulrich; Ganss, Fabian; Khan, Muhammad Moazzam; Rebohle, Lars; Zhou, Shengqiang; Knoch, Joachim; Helm, Manfred; Cuniberti, Gianaurelio; Georgiev, Yordan; Prucnal, Slawomir

Bei diesem Datensatz handelt es sich um die im Paper beschriebenen µRaman, RBS und TEM Daten sowie die SRIM Simulationen

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Publication date:
June 12, 2024
DOI:
10.14278/rodare.3016

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10.14278/rodare.3016

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Keyword(s):
Implantation SiGeSn Si1-x-yGeySnx Sn FLA Flash lamp annealing
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-39199
Referenced by:
https://www.hzdr.de/publications/Publ-39097
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Version 1 10.14278/rodare.3016 Jun 12, 2024
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