April 29, 2022 Dataset Open Access

Arora, Himani; Fekri, Zahra; Vekariya, Yagnika Nandlal; Chava, Phanish; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur

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<oai_dc:dc xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:oai_dc="http://www.openarchives.org/OAI/2.0/oai_dc/" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xsi:schemaLocation="http://www.openarchives.org/OAI/2.0/oai_dc/ http://www.openarchives.org/OAI/2.0/oai_dc.xsd">
  <dc:creator>Arora, Himani</dc:creator>
  <dc:creator>Fekri, Zahra</dc:creator>
  <dc:creator>Vekariya, Yagnika Nandlal</dc:creator>
  <dc:creator>Chava, Phanish</dc:creator>
  <dc:creator>Watanabe, Kenji</dc:creator>
  <dc:creator>Taniguchi, Takashi</dc:creator>
  <dc:creator>Helm, Manfred</dc:creator>
  <dc:creator>Erbe, Artur</dc:creator>
  <dc:date>2022-04-29</dc:date>
  <dc:description>Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.</dc:description>
  <dc:identifier>https://rodare.hzdr.de/record/1552</dc:identifier>
  <dc:identifier>10.14278/rodare.1552</dc:identifier>
  <dc:identifier>oai:rodare.hzdr.de:1552</dc:identifier>
  <dc:relation>doi:10.17815/jlsrf-3-159</dc:relation>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-34502</dc:relation>
  <dc:relation>url:https://www.hzdr.de/publications/Publ-34592</dc:relation>
  <dc:relation>doi:10.14278/rodare.1551</dc:relation>
  <dc:relation>url:https://rodare.hzdr.de/communities/rodare</dc:relation>
  <dc:rights>info:eu-repo/semantics/openAccess</dc:rights>
  <dc:rights>https://creativecommons.org/licenses/by/4.0/legalcode</dc:rights>
  <dc:subject>two-dimensional semiconductors</dc:subject>
  <dc:subject>black phosphorus</dc:subject>
  <dc:subject>field-effect transistors</dc:subject>
  <dc:subject>hexagonal boron nitride</dc:subject>
  <dc:subject>encapsulation</dc:subject>
  <dc:title>Data: Fully encapsulated and stable black phosphorus field-effect transistors</dc:title>
  <dc:type>info:eu-repo/semantics/other</dc:type>
  <dc:type>dataset</dc:type>
</oai_dc:dc>