Dataset Open Access

Data: Fully encapsulated and stable black phosphorus field-effect transistors

Arora, Himani; Fekri, Zahra; Vekariya, Yagnika Nandlal; Chava, Phanish; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur

Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.

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Publication date:
April 29, 2022
DOI:
10.14278/rodare.1552

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10.14278/rodare.1552

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Keyword(s):
two-dimensional semiconductors black phosphorus field-effect transistors hexagonal boron nitride encapsulation
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-34592
Referenced by:
https://www.hzdr.de/publications/Publ-34502
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License (for files):
Creative Commons Attribution 4.0 International

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