Dataset Open Access

Data: Fully encapsulated and stable black phosphorus field-effect transistors

Arora, Himani; Fekri, Zahra; Vekariya, Yagnika Nandlal; Chava, Phanish; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur

Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.

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