Dataset Open Access
Arora, Himani;
Fekri, Zahra;
Vekariya, Yagnika Nandlal;
Chava, Phanish;
Watanabe, Kenji;
Taniguchi, Takashi;
Helm, Manfred;
Erbe, Artur
{
"updated": "2024-08-12T13:23:40.411776+00:00",
"doi": "10.14278/rodare.1552",
"files": [
{
"type": "zip",
"size": 1916829,
"bucket": "fccb402b-da3e-401b-afa6-5bd8af9205bf",
"checksum": "md5:0b43ff5d54d92a0dd2c0f49b1b11ae57",
"key": "Data.zip",
"links": {
"self": "https://rodare.hzdr.de/api/files/fccb402b-da3e-401b-afa6-5bd8af9205bf/Data.zip"
}
}
],
"owners": [
528
],
"created": "2022-05-02T11:26:02.024863+00:00",
"stats": {
"volume": 904743288.0,
"unique_downloads": 108.0,
"version_unique_downloads": 108.0,
"unique_views": 663.0,
"downloads": 472.0,
"version_unique_views": 663.0,
"version_views": 1228.0,
"version_downloads": 472.0,
"version_volume": 904743288.0,
"views": 1228.0
},
"id": 1552,
"metadata": {
"access_right_category": "success",
"license": {
"id": "CC-BY-4.0"
},
"access_right": "open",
"pub_id": "34592",
"resource_type": {
"title": "Dataset",
"type": "dataset"
},
"keywords": [
"two-dimensional semiconductors",
"black phosphorus",
"field-effect transistors",
"hexagonal boron nitride",
"encapsulation"
],
"doc_id": "1",
"related_identifiers": [
{
"relation": "cites",
"scheme": "doi",
"identifier": "10.17815/jlsrf-3-159"
},
{
"relation": "isReferencedBy",
"scheme": "url",
"identifier": "https://www.hzdr.de/publications/Publ-34502"
},
{
"relation": "isIdenticalTo",
"scheme": "url",
"identifier": "https://www.hzdr.de/publications/Publ-34592"
},
{
"relation": "isVersionOf",
"scheme": "doi",
"identifier": "10.14278/rodare.1551"
}
],
"creators": [
{
"orcid": "0000-0003-3318-9877",
"name": "Arora, Himani"
},
{
"orcid": "0000-0001-7144-5507",
"name": "Fekri, Zahra"
},
{
"name": "Vekariya, Yagnika Nandlal"
},
{
"orcid": "0000-0001-9938-2835",
"name": "Chava, Phanish"
},
{
"name": "Watanabe, Kenji"
},
{
"name": "Taniguchi, Takashi"
},
{
"name": "Helm, Manfred"
},
{
"orcid": "0000-0001-6368-8728",
"name": "Erbe, Artur"
}
],
"title": "Data: Fully encapsulated and stable black phosphorus field-effect transistors",
"description": "<p>Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.</p>",
"relations": {
"version": [
{
"count": 1,
"is_last": true,
"parent": {
"pid_type": "recid",
"pid_value": "1551"
},
"last_child": {
"pid_type": "recid",
"pid_value": "1552"
},
"index": 0
}
]
},
"doi": "10.14278/rodare.1552",
"communities": [
{
"id": "fwi"
},
{
"id": "ibc"
},
{
"id": "rodare"
}
],
"publication_date": "2022-04-29"
},
"conceptdoi": "10.14278/rodare.1551",
"conceptrecid": "1551",
"links": {
"badge": "https://rodare.hzdr.de/badge/doi/10.14278/rodare.1552.svg",
"doi": "https://doi.org/10.14278/rodare.1552",
"conceptbadge": "https://rodare.hzdr.de/badge/doi/10.14278/rodare.1551.svg",
"conceptdoi": "https://doi.org/10.14278/rodare.1551",
"bucket": "https://rodare.hzdr.de/api/files/fccb402b-da3e-401b-afa6-5bd8af9205bf",
"html": "https://rodare.hzdr.de/record/1552",
"latest": "https://rodare.hzdr.de/api/records/1552",
"latest_html": "https://rodare.hzdr.de/record/1552"
},
"revision": 7
}
| All versions | This version | |
|---|---|---|
| Views | 1,228 | 1,228 |
| Downloads | 472 | 472 |
| Data volume | 904.7 MB | 904.7 MB |
| Unique views | 663 | 663 |
| Unique downloads | 108 | 108 |