April 29, 2022 Dataset Open Access

Arora, Himani; Fekri, Zahra; Vekariya, Yagnika Nandlal; Chava, Phanish; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur

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{
  "datePublished": "2022-04-29", 
  "@id": "https://doi.org/10.14278/rodare.1552", 
  "url": "https://rodare.hzdr.de/record/1552", 
  "name": "Data: Fully encapsulated and stable black phosphorus field-effect transistors", 
  "keywords": [
    "two-dimensional semiconductors", 
    "black phosphorus", 
    "field-effect transistors", 
    "hexagonal boron nitride", 
    "encapsulation"
  ], 
  "license": "https://creativecommons.org/licenses/by/4.0/legalcode", 
  "@type": "Dataset", 
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  "citation": [
    {
      "@type": "CreativeWork", 
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  "distribution": [
    {
      "@type": "DataDownload", 
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  "identifier": "https://doi.org/10.14278/rodare.1552", 
  "description": "<p>Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.</p>", 
  "sameAs": [
    "https://www.hzdr.de/publications/Publ-34592"
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  "creator": [
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      "name": "Arora, Himani", 
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      "name": "Fekri, Zahra", 
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    {
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      "name": "Erbe, Artur", 
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