Dataset Open Access

Data: Fully encapsulated and stable black phosphorus field-effect transistors

Arora, Himani; Fekri, Zahra; Vekariya, Yagnika Nandlal; Chava, Phanish; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Erbe, Artur

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{
  "issued": {
    "date-parts": [
      [
        2022, 
        4, 
        29
      ]
    ]
  }, 
  "type": "dataset", 
  "DOI": "10.14278/rodare.1552", 
  "id": "1552", 
  "author": [
    {
      "family": "Arora, Himani"
    }, 
    {
      "family": "Fekri, Zahra"
    }, 
    {
      "family": "Vekariya, Yagnika Nandlal"
    }, 
    {
      "family": "Chava, Phanish"
    }, 
    {
      "family": "Watanabe, Kenji"
    }, 
    {
      "family": "Taniguchi, Takashi"
    }, 
    {
      "family": "Helm, Manfred"
    }, 
    {
      "family": "Erbe, Artur"
    }
  ], 
  "title": "Data: Fully encapsulated and stable black phosphorus field-effect transistors", 
  "publisher": "Rodare", 
  "abstract": "<p>Fabricated devices went through electrical characterization with 4200-SCS parameter analyzer located in greyroom and Agilent 4156C Parameter Analyzer equipped with a cool-down setup located in 613. The measured data was processed with origin software.</p>"
}
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Publication date:
April 29, 2022
DOI:
10.14278/rodare.1552

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10.14278/rodare.1552

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Keyword(s):
two-dimensional semiconductors black phosphorus field-effect transistors hexagonal boron nitride encapsulation
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-34592
Referenced by:
https://www.hzdr.de/publications/Publ-34502
Communities:
License (for files):
Creative Commons Attribution 4.0 International

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Version 1 10.14278/rodare.1552 Apr 29, 2022
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