Dataset Open Access

Data publication: Examining different regimes of ionization-induced damage in GaN through atomistic simulations

Sequeira, Miguel; Djurabekova, Flyura; Nordlund, Kai; Mattei, Jean-Gabriel; Monnet, Isabelle; Grygiel, Clara; Alves, Eduardo; Lorenz, Katharina

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Publication date:
December 2, 2022
DOI:
10.14278/rodare.1991

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10.14278/rodare.1991

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Keyword(s):
Defects GaN Molecular Dynamics Radiation Recrystallization Two-Temperature Model
Related identifiers:
Identical to:
https://www.hzdr.de/publications/Publ-35645
Referenced by:
10.1002/smll.202102235, https://www.hzdr.de/publications/Publ-35270
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License (for files):
Creative Commons Attribution 4.0 International

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