Dataset Open Access
Data publication: Examining different regimes of ionization-induced damage in GaN through atomistic simulations
Sequeira, Miguel;
Djurabekova, Flyura;
Nordlund, Kai;
Mattei, Jean-Gabriel;
Monnet, Isabelle;
Grygiel, Clara;
Alves, Eduardo;
Lorenz, Katharina
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820
2,015
views
downloads
| All versions | This version | |
|---|---|---|
| Views | 820 | 820 |
| Downloads | 2,015 | 2,015 |
| Data volume | 35.5 TB | 35.5 TB |
| Unique views | 405 | 405 |
| Unique downloads | 113 | 113 |
- Publication date:
- December 2, 2022
- DOI:
-
- Keyword(s):
- Defects GaN Molecular Dynamics Radiation Recrystallization Two-Temperature Model
- Related identifiers:
- Identical to:
https://www.hzdr.de/publications/Publ-35645 - Referenced by:
10.1002/smll.202102235, https://www.hzdr.de/publications/Publ-35270 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International
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Cite as
Sequeira, Miguel, Djurabekova, Flyura, Nordlund, Kai, Mattei, Jean-Gabriel, Monnet, Isabelle, Grygiel, Clara, … Lorenz, Katharina. (2022). Data publication: Examining different regimes of ionization-induced damage in GaN through atomistic simulations [Data set]. Rodare. http://doi.org/10.14278/rodare.1991
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