Dataset Open Access
Sequeira, Miguel;
Djurabekova, Flyura;
Nordlund, Kai;
Mattei, Jean-Gabriel;
Monnet, Isabelle;
Grygiel, Clara;
Alves, Eduardo;
Lorenz, Katharina
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<dct:title>Data publication: Examining different regimes of ionization-induced damage in GaN through atomistic simulations</dct:title>
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<dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2022</dct:issued>
<dcat:keyword>Defects</dcat:keyword>
<dcat:keyword>GaN</dcat:keyword>
<dcat:keyword>Molecular Dynamics</dcat:keyword>
<dcat:keyword>Radiation</dcat:keyword>
<dcat:keyword>Recrystallization</dcat:keyword>
<dcat:keyword>Two-Temperature Model</dcat:keyword>
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<dct:description><p>Two Temperature Model - Molecular Dynamics (TTM-MD) simulations describing the interaction of Swift Heavy Ions (0.35-0.54 MeV/amu Xe, 0.6 and 5.8 MeV/amu Pb, and 3.8 MeV/amu U ions. The simulations are discussed in:</p> <p>Sequeira, M. C., Djurabekova, F., Nordlund, K., Mattei, J.-G., Monnet, I., Grygiel, C., Alves, E., Lorenz, K., Examining Different Regimes of Ionization-Induced Damage in GaN Through Atomistic Simulations. Small 2022, 2102235. <a href="http://doi.org/10.1002/smll.202102235">https://doi.org/10.1002/smll.202102235</a></p> <p>Each zip file contains the input and output corresponding to each ion simulation. The input and output files are those used and generated by PARCAS 5.22 (https://gitlab.com/acclab/parcas). The radial energy profile deposited by the ion, as calculated within the TTM, can be found in the in/track.in file. The file contains two columns: one with the distance to the ion trajectory (in Angstrom) and another with the energy per atom (in eV/atom). For additional information on the simulations (e.g. bulk vs surface), please refer to the methods section of the reference above.</p></dct:description>
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