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High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder


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  "datePublished": "2026-08-19", 
  "keywords": [
    "GeSn alloys", 
    "Ion implantation", 
    "Flash lamp annealing", 
    "Dopant activation", 
    "Non-equilibrium doping", 
    "Strain engineering"
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