Dataset Open Access

High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity

Godoy Perez, Guillermo Fernando; Rebohle, Lars; Kentsch, Ulrich; Chang, Guo-En; Zhou, Shengqiang; Yu, Ing-Song; Fischer, Inga A.; Berkmann, Fritz; Berencen, Yonder

Citation Style Language JSON Export

{
  "DOI": "10.14278/rodare.5003", 
  "publisher": "Rodare", 
  "author": [
    {
      "family": "Godoy Perez, Guillermo Fernando"
    }, 
    {
      "family": "Rebohle, Lars"
    }, 
    {
      "family": "Kentsch, Ulrich"
    }, 
    {
      "family": "Chang, Guo-En"
    }, 
    {
      "family": "Zhou, Shengqiang"
    }, 
    {
      "family": "Yu, Ing-Song"
    }, 
    {
      "family": "Fischer, Inga A."
    }, 
    {
      "family": "Berkmann, Fritz"
    }, 
    {
      "family": "Berencen, Yonder"
    }
  ], 
  "title": "High-efficiency phosphorus activation in Ge0.95Sn0.05 enabled by ion implantation and flash lamp annealing with preserved alloy integrity", 
  "id": "5003", 
  "issued": {
    "date-parts": [
      [
        2026, 
        8, 
        19
      ]
    ]
  }, 
  "abstract": "<p>Origin and excel files used for data processing and visualisation of the different characterisation techniques performed (Raman, RBS, XRD, Hall Effect) of the processed GeSn material.</p>", 
  "type": "dataset"
}
152
131
views
downloads
All versions This version
Views 15216
Downloads 13122
Data volume 956.6 MB138.0 MB
Unique views 13215
Unique downloads 9421
More info on how stats are collected.
Publication date:
August 19, 2026
DOI:
10.14278/rodare.5003

RODARE DOI Badge

DOI 

10.14278/rodare.5003

Markdown 

[![DOI](https://rodare.hzdr.de/badge/DOI/10.14278/rodare.5003.svg)](https://doi.org/10.14278/rodare.5003)

reStructedText 

.. image:: https://rodare.hzdr.de/badge/DOI/10.14278/rodare.5003.svg
   :target: https://doi.org/10.14278/rodare.5003

HTML 

<a href="https://doi.org/10.14278/rodare.5003"><img src="https://rodare.hzdr.de/badge/DOI/10.14278/rodare.5003.svg" alt="DOI"></a>

Image URL 

https://rodare.hzdr.de/badge/DOI/10.14278/rodare.5003.svg

Target URL 

https://doi.org/10.14278/rodare.5003

Keyword(s):
GeSn alloys Ion implantation Flash lamp annealing Dopant activation Non-equilibrium doping Strain engineering
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-43591
Communities:
License (for files):
Creative Commons Attribution 4.0 International

Versions

Version 2 10.14278/rodare.5003 Aug 19, 2026
Version 1 10.14278/rodare.4962 Aug 19, 2026
Cite all versions? You can cite all versions by using the DOI 10.14278/rodare.4961. This DOI represents all versions, and will always resolve to the latest one. Read more.

Share

Cite as

Export