Dataset Open Access

Data publication: Telecom-band quantum memory with chlorine defects in silicon carbide

Anisimov, Andrei; Mavridou, Kalliopi; Mathews, Ashin Varghese; Helm, Manfred; Astakhov, Georgy

This dataset provides the first experimental demonstration of chlorine-related color centers in silicon carbide exhibiting coherent spin properties and optical emission in the telecom band.

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Fig1_b ODMR of Cl-related defects in 4H-SiC.dat
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Fig1_c ODMR of Cl-related defects in 4H-SiC.dat
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Fig1_d ODMR of Cl-related defects in 4H-SiC.dat
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Fig1_e ODMR of Cl-related defects in 4H-SiC.dat
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Fig2_a Optical spectroscopy and photoexcitation dynamics of Cl-related defects in 4H-SiC.dat
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Fig2_b Optical spectroscopy and photoexcitation dynamics of Cl-related defects in 4H-SiC.dat
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Fig2_c Optical spectroscopy and photoexcitation dynamics of Cl-related defects in 4H-SiC.dat
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Fig2_d Optical spectroscopy and photoexcitation dynamics of Cl-related defects in 4H-SiC.dat
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Fig3_a Coupled electron-nuclear spins of Cl-related defects in 4H-SiC.dat
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Fig3_b Coupled electron-nuclear spins of Cl-related defects in 4H-SiC.dat
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Fig3_c Coupled electron-nuclear spins of Cl-related defects in 4H-SiC.dat
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Fig3_d Coupled electron-nuclear spins of Cl-related defects in 4H-SiC.dat
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Fig3_e Coupled electron-nuclear spins of Cl-related defects in 4H-SiC.dat
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Fig4_a Coherent spin dynamics of Cl-related defects in 4H-SiC.dat
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Fig4_b Coherent spin dynamics of Cl-related defects in 4H-SiC.dat
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FigS1_a Room-temperature time-resolved spectroscopy.dat
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FigS1_b Room-temperature time-resolved spectroscopy.dat
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FigS2_a RF-assisted spectroscopy.dat
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FigS2_b RF-assisted spectroscopy.dat
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FigS3_b RF-induced PL dynamics.dat
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FigS3_c RF-induced PL dynamics.dat
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FigS4_a Ramsey fringes.dat
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FigS4_b Ramsey fringes.dat
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