Dataset Open Access

Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Wilflingseder, Christoph; Aberl, Johannes; Prado Navarrete, Enrique; Hesser, Guenter; Groiss, Heiko; Liedke, Maciej Oskar; Butterling, Maik; Wagner, Andreas; Hirschmann, Eric; Corley-Wiciak, Cedric; Zoellner, Marvin; Capellini, Giovanni; Fromherz, Thomas; Brehm, Moritz


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  <identifier identifierType="DOI">10.14278/rodare.3327</identifier>
  <creators>
    <creator>
      <creatorName>Wilflingseder, Christoph</creatorName>
      <givenName>Christoph</givenName>
      <familyName>Wilflingseder</familyName>
      <affiliation>Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Aberl, Johannes</creatorName>
      <givenName>Johannes</givenName>
      <familyName>Aberl</familyName>
      <affiliation>Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Prado Navarrete, Enrique</creatorName>
      <givenName>Enrique</givenName>
      <familyName>Prado Navarrete</familyName>
      <affiliation>Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Hesser, Guenter</creatorName>
      <givenName>Guenter</givenName>
      <familyName>Hesser</familyName>
      <affiliation>Christian Doppler Laboratory for Nanoscale Phase Transformations, Centre For Surface And Nanoanalytics (ZONA), Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Groiss, Heiko</creatorName>
      <givenName>Heiko</givenName>
      <familyName>Groiss</familyName>
      <affiliation>Christian Doppler Laboratory for Nanoscale Phase Transformations, Centre For Surface And Nanoanalytics (ZONA), Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Liedke, Maciej Oskar</creatorName>
      <givenName>Maciej Oskar</givenName>
      <familyName>Liedke</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-7933-7295</nameIdentifier>
    </creator>
    <creator>
      <creatorName>Butterling, Maik</creatorName>
      <givenName>Maik</givenName>
      <familyName>Butterling</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0003-3674-0767</nameIdentifier>
    </creator>
    <creator>
      <creatorName>Wagner, Andreas</creatorName>
      <givenName>Andreas</givenName>
      <familyName>Wagner</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-7575-3961</nameIdentifier>
    </creator>
    <creator>
      <creatorName>Hirschmann, Eric</creatorName>
      <givenName>Eric</givenName>
      <familyName>Hirschmann</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-5782-9627</nameIdentifier>
    </creator>
    <creator>
      <creatorName>Corley-Wiciak, Cedric</creatorName>
      <givenName>Cedric</givenName>
      <familyName>Corley-Wiciak</familyName>
      <affiliation>ESRF – European Synchrotron Radiation Facility, 71, Avenue des Martyrs, CS 40220, 38043 Grenoble Cedex 9, France</affiliation>
    </creator>
    <creator>
      <creatorName>Zoellner, Marvin</creatorName>
      <givenName>Marvin</givenName>
      <familyName>Zoellner</familyName>
      <affiliation>Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236, Frankfurt(Oder), Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Capellini, Giovanni</creatorName>
      <givenName>Giovanni</givenName>
      <familyName>Capellini</familyName>
      <affiliation>Leibniz-Institut für innovative Mikroelektronik, Im Technologiepark 25, D-15236, Frankfurt(Oder), Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Fromherz, Thomas</creatorName>
      <givenName>Thomas</givenName>
      <familyName>Fromherz</familyName>
      <affiliation>Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
    <creator>
      <creatorName>Brehm, Moritz</creatorName>
      <givenName>Moritz</givenName>
      <familyName>Brehm</familyName>
      <affiliation>Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, 4040, Linz, Austria</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment</title>
  </titles>
  <publisher>Rodare</publisher>
  <publicationYear>2024</publicationYear>
  <subjects>
    <subject>Germanium</subject>
    <subject>defects</subject>
    <subject>positron annihilation spectroscopy</subject>
    <subject>MBE</subject>
    <subject>low temperature growth</subject>
    <subject>Ge-vacancy</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2024-12-11</date>
  </dates>
  <language>en</language>
  <resourceType resourceTypeGeneral="Dataset"/>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://rodare.hzdr.de/record/3327</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="Cites">10.17815/jlsrf-2-58</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsIdenticalTo">https://www.hzdr.de/publications/Publ-40173</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsReferencedBy">https://www.hzdr.de/publications/Publ-40037</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.14278/rodare.3326</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/elbe</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/matter</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/pelbe</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/rodare</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="https://creativecommons.org/licenses/by/4.0/legalcode">Creative Commons Attribution 4.0 International</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;The data set consists of the raw and analysis data. Positron annihilation lifetime spectroscopy depth profiles were measured at the positron ELBE during the PI beamtime on November 2023 (POS23203233). MBE deposited Ge layers at temperatures of 100&amp;deg;C - 350&amp;deg;C have been evaluated concerning defect microstructure. The most dominant defect, namely Ge vacancy, has been evidenced independently on the temperature conditions. The results support the main claim of the manuscript, feasibility of the low temperature growth approach to Ge.&lt;/p&gt;</description>
  </descriptions>
</resource>
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