Dataset Open Access
Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment
Wilflingseder, Christoph;
Aberl, Johannes;
Prado Navarrete, Enrique;
Hesser, Guenter;
Groiss, Heiko;
Liedke, Maciej Oskar;
Butterling, Maik;
Wagner, Andreas;
Hirschmann, Eric;
Corley-Wiciak, Cedric;
Zoellner, Marvin;
Capellini, Giovanni;
Fromherz, Thomas;
Brehm, Moritz
The data set consists of the raw and analysis data. Positron annihilation lifetime spectroscopy depth profiles were measured at the positron ELBE during the PI beamtime on November 2023 (POS23203233). MBE deposited Ge layers at temperatures of 100°C - 350°C have been evaluated concerning defect microstructure. The most dominant defect, namely Ge vacancy, has been evidenced independently on the temperature conditions. The results support the main claim of the manuscript, feasibility of the low temperature growth approach to Ge.
| Name | Size | |
|---|---|---|
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5533G-Ge50-350C-onGe-320C_3LT-noSC.txt
md5:862ae660470f35c132bba5059df8c8c4 |
5.2 kB | Download |
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5534-BAPW-G-Ge50-200C-onGe320C_3LT.txt
md5:23fa6e38e7cc1d0b993b7a83f7352ee0 |
5.2 kB | Download |
|
5535-BAPW-G-Ge50-150C-onGe320C_3LT.txt
md5:960b037d28fde2f926e4e5e10746b26f |
5.2 kB | Download |
|
5536-BAPW-G-Ge50-100C-onGe-320C_3LT.txt
md5:3166cc99db66e865b95b072d79644e9f |
5.3 kB | Download |
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POS23203233-MB_Ge-on-Ge.zip
md5:5fe15cd780284d316d0c885639eb7be5 |
1.3 MB | Download |
| All versions | This version | |
|---|---|---|
| Views | 494 | 494 |
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| Data volume | 12.1 MB | 12.1 MB |
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| Unique downloads | 127 | 127 |
- Publication date:
- December 11, 2024
- DOI:
-
- Keyword(s):
- Germanium defects positron annihilation spectroscopy MBE low temperature growth Ge-vacancy
- Related identifiers:
- Cites:
10.17815/jlsrf-2-58 - Identical to:
https://www.hzdr.de/publications/Publ-40173 - Referenced by:
https://www.hzdr.de/publications/Publ-40037 - Communities:
- License (for files):
- Creative Commons Attribution 4.0 International