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Data publication: Ge epitaxy at ultra-low growth temperatures enabled by a pristine growth environment

Wilflingseder, Christoph; Aberl, Johannes; Prado Navarrete, Enrique; Hesser, Guenter; Groiss, Heiko; Liedke, Maciej Oskar; Butterling, Maik; Wagner, Andreas; Hirschmann, Eric; Corley-Wiciak, Cedric; Zoellner, Marvin; Capellini, Giovanni; Fromherz, Thomas; Brehm, Moritz

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    <dcat:keyword>Germanium</dcat:keyword>
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    <dct:description>&lt;p&gt;The data set consists of the raw and analysis data. Positron annihilation lifetime spectroscopy depth profiles were measured at the positron ELBE during the PI beamtime on November 2023 (POS23203233). MBE deposited Ge layers at temperatures of 100&amp;deg;C - 350&amp;deg;C have been evaluated concerning defect microstructure. The most dominant defect, namely Ge vacancy, has been evidenced independently on the temperature conditions. The results support the main claim of the manuscript, feasibility of the low temperature growth approach to Ge.&lt;/p&gt;</dct:description>
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Publication date:
December 11, 2024
DOI:
10.14278/rodare.3327

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Keyword(s):
Germanium defects positron annihilation spectroscopy MBE low temperature growth Ge-vacancy
Related identifiers:
Cites:
10.17815/jlsrf-2-58
Identical to:
https://www.hzdr.de/publications/Publ-40173
Referenced by:
https://www.hzdr.de/publications/Publ-40037
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