October 19, 2026 Software Open Access

Schmidt, Bruno; Posselt, Matthias

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  <identifier identifierType="DOI">10.14278/rodare.5102</identifier>
  <creators>
    <creator>
      <creatorName>Schmidt, Bruno</creatorName>
      <givenName>Bruno</givenName>
      <familyName>Schmidt</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-7195-4408</nameIdentifier>
    </creator>
    <creator>
      <creatorName>Posselt, Matthias</creatorName>
      <givenName>Matthias</givenName>
      <familyName>Posselt</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-8218-5744</nameIdentifier>
    </creator>
  </creators>
  <titles>
    <title>Crystal-TRIM</title>
  </titles>
  <publisher>Rodare</publisher>
  <publicationYear>2026</publicationYear>
  <dates>
    <date dateType="Issued">2026-10-19</date>
  </dates>
  <resourceType resourceTypeGeneral="Software"/>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://rodare.hzdr.de/record/5102</alternateIdentifier>
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  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="Cites">10.17815/jlsrf-3-159</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsIdenticalTo">https://www.hzdr.de/publications/Publ-44125</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.14278/rodare.5101</relatedIdentifier>
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  <version>1.0.0</version>
  <rightsList>
    <rights rightsURI="https://opensource.org/licenses/EUPL-1.1">European Union Public License 1.2</rights>
    <rights rightsURI="info:eu-repo/semantics/openAccess">Open Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Crystal-TRIM is a Monte Carlo simulation code for ion implantation into single-crystalline silicon, germanium and diamond. It is based on the binary collision approximation. It follows the trajectories of energetic ions through the crystal lattice, so it reproduces channeling effects that amorphous-target codes cannot. The target can carry up to ten amorphous top layers, such as oxide or masking films. The program calculates depth profiles of implanted ions, nuclear and electronic energy deposition, and damage (defect concentration and damage probability). Damage can be accumulated dynamically during the implantation. Nuclear stopping can use Coulomb, Moliere or universal potentials, and electronic stopping follows the ZBL approach. A splitting procedure improves statistics in low-probability regions such as deep channeling tails. Crystal-TRIM is a three-stage tool chain written in Fortran 77: an input dialog, the simulation, and profile post-processing. The stages exchange plain-text files. Precompiled Linux and Windows executables, the manual, tutorials and eight worked examples are included. The software is used for planning and interpreting ion implantation and ion-beam modification experiments in semiconductors.&lt;/p&gt;</description>
    <description descriptionType="Other">{"references": ["https://doi.org/10.1149/1.1837618"]}</description>
  </descriptions>
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