Software Open Access
Schmidt, Bruno;
Posselt, Matthias
<?xml version='1.0' encoding='utf-8'?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:adms="http://www.w3.org/ns/adms#" xmlns:cnt="http://www.w3.org/2011/content#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dct="http://purl.org/dc/terms/" xmlns:dctype="http://purl.org/dc/dcmitype/" xmlns:dcat="http://www.w3.org/ns/dcat#" xmlns:duv="http://www.w3.org/ns/duv#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:frapo="http://purl.org/cerif/frapo/" xmlns:geo="http://www.w3.org/2003/01/geo/wgs84_pos#" xmlns:gsp="http://www.opengis.net/ont/geosparql#" xmlns:locn="http://www.w3.org/ns/locn#" xmlns:org="http://www.w3.org/ns/org#" xmlns:owl="http://www.w3.org/2002/07/owl#" xmlns:prov="http://www.w3.org/ns/prov#" xmlns:rdfs="http://www.w3.org/2000/01/rdf-schema#" xmlns:schema="http://schema.org/" xmlns:skos="http://www.w3.org/2004/02/skos/core#" xmlns:vcard="http://www.w3.org/2006/vcard/ns#" xmlns:wdrs="http://www.w3.org/2007/05/powder-s#">
<rdf:Description rdf:about="https://doi.org/10.14278/rodare.5102">
<rdf:type rdf:resource="http://www.w3.org/ns/dcat#Dataset"/>
<dct:type rdf:resource="http://purl.org/dc/dcmitype/Software"/>
<dct:identifier rdf:datatype="http://www.w3.org/2001/XMLSchema#anyURI">https://doi.org/10.14278/rodare.5102</dct:identifier>
<foaf:page rdf:resource="https://doi.org/10.14278/rodare.5102"/>
<dct:creator>
<rdf:Description rdf:about="http://orcid.org/0000-0001-7195-4408">
<rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
<foaf:name>Schmidt, Bruno</foaf:name>
<foaf:givenName>Bruno</foaf:givenName>
<foaf:familyName>Schmidt</foaf:familyName>
</rdf:Description>
</dct:creator>
<dct:creator>
<rdf:Description rdf:about="http://orcid.org/0000-0002-8218-5744">
<rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
<foaf:name>Posselt, Matthias</foaf:name>
<foaf:givenName>Matthias</foaf:givenName>
<foaf:familyName>Posselt</foaf:familyName>
</rdf:Description>
</dct:creator>
<dct:title>Crystal-TRIM</dct:title>
<dct:publisher>
<foaf:Agent>
<foaf:name>Rodare</foaf:name>
</foaf:Agent>
</dct:publisher>
<dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2026</dct:issued>
<dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#date">2026-10-19</dct:issued>
<owl:sameAs rdf:resource="https://rodare.hzdr.de/record/5102"/>
<adms:identifier>
<adms:Identifier>
<skos:notation rdf:datatype="http://www.w3.org/2001/XMLSchema#anyURI">https://rodare.hzdr.de/record/5102</skos:notation>
</adms:Identifier>
</adms:identifier>
<dct:relation rdf:resource="https://doi.org/10.17815/jlsrf-3-159"/>
<owl:sameAs rdf:resource="https://www.hzdr.de/publications/Publ-44125"/>
<dct:isVersionOf rdf:resource="https://doi.org/10.14278/rodare.5101"/>
<dct:isPartOf rdf:resource="https://rodare.hzdr.de/communities/ibc"/>
<dct:isPartOf rdf:resource="https://rodare.hzdr.de/communities/rodare"/>
<owl:versionInfo>1.0.0</owl:versionInfo>
<dct:description><p>Crystal-TRIM is a Monte Carlo simulation code for ion implantation into single-crystalline silicon, germanium and diamond. It is based on the binary collision approximation. It follows the trajectories of energetic ions through the crystal lattice, so it reproduces channeling effects that amorphous-target codes cannot. The target can carry up to ten amorphous top layers, such as oxide or masking films. The program calculates depth profiles of implanted ions, nuclear and electronic energy deposition, and damage (defect concentration and damage probability). Damage can be accumulated dynamically during the implantation. Nuclear stopping can use Coulomb, Moliere or universal potentials, and electronic stopping follows the ZBL approach. A splitting procedure improves statistics in low-probability regions such as deep channeling tails. Crystal-TRIM is a three-stage tool chain written in Fortran 77: an input dialog, the simulation, and profile post-processing. The stages exchange plain-text files. Precompiled Linux and Windows executables, the manual, tutorials and eight worked examples are included. The software is used for planning and interpreting ion implantation and ion-beam modification experiments in semiconductors.</p></dct:description>
<dct:description xml:lang="">{"references": ["https://doi.org/10.1149/1.1837618"]}</dct:description>
<dct:accessRights rdf:resource="http://publications.europa.eu/resource/authority/access-right/PUBLIC"/>
<dct:accessRights>
<dct:RightsStatement rdf:about="info:eu-repo/semantics/openAccess">
<rdfs:label>Open Access</rdfs:label>
</dct:RightsStatement>
</dct:accessRights>
<dcat:distribution>
<dcat:Distribution>
<dct:rights>
<dct:RightsStatement rdf:about="https://opensource.org/licenses/EUPL-1.1">
<rdfs:label>European Union Public License 1.2</rdfs:label>
</dct:RightsStatement>
</dct:rights>
<dcat:accessURL rdf:resource="https://doi.org/10.14278/rodare.5102"/>
</dcat:Distribution>
</dcat:distribution>
</rdf:Description>
</rdf:RDF>
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| Data volume | 39.7 MB | 39.7 MB |
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| Unique downloads | 5 | 5 |