January 20, 2025 Dataset Restricted Access

Ghosh, Sayantan; Khan, Muhammad Bilal; Prucnal, Slawomir; Hübner, René; Chava, Phanish; Mauersberger, Tom; Mikolajick, Thomas; Erbe, Artur; Georgiev, Yordan

DataCite XML Export

<?xml version='1.0' encoding='utf-8'?>
<resource xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance" xmlns="http://datacite.org/schema/kernel-4" xsi:schemaLocation="http://datacite.org/schema/kernel-4 http://schema.datacite.org/meta/kernel-4.1/metadata.xsd">
  <identifier identifierType="DOI">10.14278/rodare.3412</identifier>
  <creators>
    <creator>
      <creatorName>Ghosh, Sayantan</creatorName>
      <givenName>Sayantan</givenName>
      <familyName>Ghosh</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0003-1347-1365</nameIdentifier>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Khan, Muhammad Bilal</creatorName>
      <givenName>Muhammad Bilal</givenName>
      <familyName>Khan</familyName>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Prucnal, Slawomir</creatorName>
      <givenName>Slawomir</givenName>
      <familyName>Prucnal</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-4088-6032</nameIdentifier>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Hübner, René</creatorName>
      <givenName>René</givenName>
      <familyName>Hübner</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-5200-6928</nameIdentifier>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Chava, Phanish</creatorName>
      <givenName>Phanish</givenName>
      <familyName>Chava</familyName>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Mauersberger, Tom</creatorName>
      <givenName>Tom</givenName>
      <familyName>Mauersberger</familyName>
      <affiliation>Namlab gGmbH, N¨othnitzer Strasse 64, Dresden, 01187, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Mikolajick, Thomas</creatorName>
      <givenName>Thomas</givenName>
      <familyName>Mikolajick</familyName>
      <affiliation>Namlab gGmbH, N¨othnitzer Strasse 64, Dresden, 01187, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Erbe, Artur</creatorName>
      <givenName>Artur</givenName>
      <familyName>Erbe</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0001-6368-8728</nameIdentifier>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
    <creator>
      <creatorName>Georgiev, Yordan</creatorName>
      <givenName>Yordan</givenName>
      <familyName>Georgiev</familyName>
      <nameIdentifier nameIdentifierScheme="ORCID" schemeURI="http://orcid.org/">0000-0002-3146-8031</nameIdentifier>
      <affiliation>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</affiliation>
    </creator>
  </creators>
  <titles>
    <title>Data: High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing</title>
  </titles>
  <publisher>Rodare</publisher>
  <publicationYear>2025</publicationYear>
  <subjects>
    <subject>Silicon Nanowire</subject>
    <subject>Reconfigurable FET</subject>
    <subject>Unipolar Conduction</subject>
    <subject>Ambipolar Conduction</subject>
    <subject>Flash Lamp Annealing</subject>
    <subject>pn On-Current Symmetry</subject>
    <subject>Schottky Barrier</subject>
  </subjects>
  <dates>
    <date dateType="Issued">2025-01-20</date>
  </dates>
  <language>en</language>
  <resourceType resourceTypeGeneral="Dataset"/>
  <alternateIdentifiers>
    <alternateIdentifier alternateIdentifierType="url">https://rodare.hzdr.de/record/3412</alternateIdentifier>
  </alternateIdentifiers>
  <relatedIdentifiers>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="Cites">10.17815/jlsrf-3-159</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsIdenticalTo">https://www.hzdr.de/publications/Publ-40733</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsReferencedBy">https://www.hzdr.de/publications/Publ-41584</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="DOI" relationType="IsVersionOf">10.14278/rodare.3411</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/fwi</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/ibc</relatedIdentifier>
    <relatedIdentifier relatedIdentifierType="URL" relationType="IsPartOf">https://rodare.hzdr.de/communities/rodare</relatedIdentifier>
  </relatedIdentifiers>
  <rightsList>
    <rights rightsURI="info:eu-repo/semantics/restrictedAccess">Restricted Access</rights>
  </rightsList>
  <descriptions>
    <description descriptionType="Abstract">&lt;p&gt;Top-down fabrication of Reconfigurable field effect transistors (RFET) is a prerequisite for large-scale integration. Silicon (Si) nanowire-based RFET devices have been extensively studied in the past decade. To achieve superior RFET performance, it is necessary to develop scalable devices with controlled silicidation of the channels, a high on-off ratio, and symmetrical p- and n- on-currents. In this work, we present the electrical performance of scalable RFET devices based on Si nanowires, featuring controlled silicide lengths attained through millisecond-range flash lamp annealing (FLA). The electronic properties of the transistors are optimized by tuning the different gate schemes and gate dielectric materials for nanowire passivation. We explore the gate capacitive control on the energy bands in the conduction of charge carriers using various dielectric materials. The transfer characteristics of a single top-gated device with SiO2 as gate dielectric show enhanced ambipolar behavior with negligible hysteresis, low subthreshold swing values of 210 mV/dec, and an on-off ratio (ION/IOFF) of up to ∼ 10^8 (8 orders of magnitude). The devices also demonstrate excellent electron and hole symmetry values with a record pn on-current symmetry of 1.03. Utilizing high-performance, scalable RFET devices with elevated symmetrical on-currents holds great promise for reducing delay and power consumption in future energy-efficient integrated circuitry.&lt;/p&gt;</description>
  </descriptions>
</resource>