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Data: High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing

Ghosh, Sayantan; Khan, Muhammad Bilal; Prucnal, Slawomir; Hübner, René; Chava, Phanish; Mauersberger, Tom; Mikolajick, Thomas; Erbe, Artur; Georgiev, Yordan

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<?xml version='1.0' encoding='utf-8'?>
<rdf:RDF xmlns:rdf="http://www.w3.org/1999/02/22-rdf-syntax-ns#" xmlns:adms="http://www.w3.org/ns/adms#" xmlns:cnt="http://www.w3.org/2011/content#" xmlns:dc="http://purl.org/dc/elements/1.1/" xmlns:dct="http://purl.org/dc/terms/" xmlns:dctype="http://purl.org/dc/dcmitype/" xmlns:dcat="http://www.w3.org/ns/dcat#" xmlns:duv="http://www.w3.org/ns/duv#" xmlns:foaf="http://xmlns.com/foaf/0.1/" xmlns:frapo="http://purl.org/cerif/frapo/" xmlns:geo="http://www.w3.org/2003/01/geo/wgs84_pos#" xmlns:gsp="http://www.opengis.net/ont/geosparql#" xmlns:locn="http://www.w3.org/ns/locn#" xmlns:org="http://www.w3.org/ns/org#" xmlns:owl="http://www.w3.org/2002/07/owl#" xmlns:prov="http://www.w3.org/ns/prov#" xmlns:rdfs="http://www.w3.org/2000/01/rdf-schema#" xmlns:schema="http://schema.org/" xmlns:skos="http://www.w3.org/2004/02/skos/core#" xmlns:vcard="http://www.w3.org/2006/vcard/ns#" xmlns:wdrs="http://www.w3.org/2007/05/powder-s#">
  <rdf:Description rdf:about="https://doi.org/10.14278/rodare.3412">
    <rdf:type rdf:resource="http://www.w3.org/ns/dcat#Dataset"/>
    <dct:type rdf:resource="http://purl.org/dc/dcmitype/Dataset"/>
    <dct:identifier rdf:datatype="http://www.w3.org/2001/XMLSchema#anyURI">https://doi.org/10.14278/rodare.3412</dct:identifier>
    <foaf:page rdf:resource="https://doi.org/10.14278/rodare.3412"/>
    <dct:creator>
      <rdf:Description rdf:about="http://orcid.org/0000-0003-1347-1365">
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Ghosh, Sayantan</foaf:name>
        <foaf:givenName>Sayantan</foaf:givenName>
        <foaf:familyName>Ghosh</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description>
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Khan, Muhammad Bilal</foaf:name>
        <foaf:givenName>Muhammad Bilal</foaf:givenName>
        <foaf:familyName>Khan</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description rdf:about="http://orcid.org/0000-0002-4088-6032">
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Prucnal, Slawomir</foaf:name>
        <foaf:givenName>Slawomir</foaf:givenName>
        <foaf:familyName>Prucnal</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description rdf:about="http://orcid.org/0000-0002-5200-6928">
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Hübner, René</foaf:name>
        <foaf:givenName>René</foaf:givenName>
        <foaf:familyName>Hübner</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description>
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Chava, Phanish</foaf:name>
        <foaf:givenName>Phanish</foaf:givenName>
        <foaf:familyName>Chava</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description>
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Mauersberger, Tom</foaf:name>
        <foaf:givenName>Tom</foaf:givenName>
        <foaf:familyName>Mauersberger</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Namlab gGmbH, N¨othnitzer Strasse 64, Dresden, 01187, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description>
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Mikolajick, Thomas</foaf:name>
        <foaf:givenName>Thomas</foaf:givenName>
        <foaf:familyName>Mikolajick</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Namlab gGmbH, N¨othnitzer Strasse 64, Dresden, 01187, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description rdf:about="http://orcid.org/0000-0001-6368-8728">
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Erbe, Artur</foaf:name>
        <foaf:givenName>Artur</foaf:givenName>
        <foaf:familyName>Erbe</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:creator>
      <rdf:Description rdf:about="http://orcid.org/0000-0002-3146-8031">
        <rdf:type rdf:resource="http://xmlns.com/foaf/0.1/Agent"/>
        <foaf:name>Georgiev, Yordan</foaf:name>
        <foaf:givenName>Yordan</foaf:givenName>
        <foaf:familyName>Georgiev</foaf:familyName>
        <org:memberOf>
          <foaf:Organization>
            <foaf:name>Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf (HZDR), Bautzner Landstraße 400, Dresden, 01328, Germany</foaf:name>
          </foaf:Organization>
        </org:memberOf>
      </rdf:Description>
    </dct:creator>
    <dct:title>Data: High-Performance Silicon Nanowire Reconfigurable Field Effect Transistors Using Flash Lamp Annealing</dct:title>
    <dct:publisher>
      <foaf:Agent>
        <foaf:name>Rodare</foaf:name>
      </foaf:Agent>
    </dct:publisher>
    <dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#gYear">2025</dct:issued>
    <dcat:keyword>Silicon Nanowire</dcat:keyword>
    <dcat:keyword>Reconfigurable FET</dcat:keyword>
    <dcat:keyword>Unipolar Conduction</dcat:keyword>
    <dcat:keyword>Ambipolar Conduction</dcat:keyword>
    <dcat:keyword>Flash Lamp Annealing</dcat:keyword>
    <dcat:keyword>pn On-Current Symmetry</dcat:keyword>
    <dcat:keyword>Schottky Barrier</dcat:keyword>
    <dct:issued rdf:datatype="http://www.w3.org/2001/XMLSchema#date">2025-01-20</dct:issued>
    <dct:language rdf:resource="http://publications.europa.eu/resource/authority/language/ENG"/>
    <owl:sameAs rdf:resource="https://rodare.hzdr.de/record/3412"/>
    <adms:identifier>
      <adms:Identifier>
        <skos:notation rdf:datatype="http://www.w3.org/2001/XMLSchema#anyURI">https://rodare.hzdr.de/record/3412</skos:notation>
      </adms:Identifier>
    </adms:identifier>
    <dct:relation rdf:resource="https://doi.org/10.17815/jlsrf-3-159"/>
    <owl:sameAs rdf:resource="https://www.hzdr.de/publications/Publ-40733"/>
    <dct:isReferencedBy rdf:resource="https://www.hzdr.de/publications/Publ-41584"/>
    <dct:isVersionOf rdf:resource="https://doi.org/10.14278/rodare.3411"/>
    <dct:isPartOf rdf:resource="https://rodare.hzdr.de/communities/fwi"/>
    <dct:isPartOf rdf:resource="https://rodare.hzdr.de/communities/ibc"/>
    <dct:isPartOf rdf:resource="https://rodare.hzdr.de/communities/rodare"/>
    <dct:description>&lt;p&gt;Top-down fabrication of Reconfigurable field effect transistors (RFET) is a prerequisite for large-scale integration. Silicon (Si) nanowire-based RFET devices have been extensively studied in the past decade. To achieve superior RFET performance, it is necessary to develop scalable devices with controlled silicidation of the channels, a high on-off ratio, and symmetrical p- and n- on-currents. In this work, we present the electrical performance of scalable RFET devices based on Si nanowires, featuring controlled silicide lengths attained through millisecond-range flash lamp annealing (FLA). The electronic properties of the transistors are optimized by tuning the different gate schemes and gate dielectric materials for nanowire passivation. We explore the gate capacitive control on the energy bands in the conduction of charge carriers using various dielectric materials. The transfer characteristics of a single top-gated device with SiO2 as gate dielectric show enhanced ambipolar behavior with negligible hysteresis, low subthreshold swing values of 210 mV/dec, and an on-off ratio (ION/IOFF) of up to ∼ 10^8 (8 orders of magnitude). The devices also demonstrate excellent electron and hole symmetry values with a record pn on-current symmetry of 1.03. Utilizing high-performance, scalable RFET devices with elevated symmetrical on-currents holds great promise for reducing delay and power consumption in future energy-efficient integrated circuitry.&lt;/p&gt;</dct:description>
    <dct:accessRights rdf:resource="http://publications.europa.eu/resource/authority/access-right/RESTRICTED"/>
    <dct:accessRights>
      <dct:RightsStatement rdf:about="info:eu-repo/semantics/restrictedAccess">
        <rdfs:label>Restricted Access</rdfs:label>
      </dct:RightsStatement>
    </dct:accessRights>
    <dcat:distribution>
      <dcat:Distribution>
        <dcat:accessURL rdf:resource="https://doi.org/10.14278/rodare.3412"/>
      </dcat:Distribution>
    </dcat:distribution>
  </rdf:Description>
</rdf:RDF>
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Publication date:
January 20, 2025
DOI:
10.14278/rodare.3412

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10.14278/rodare.3412

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Keyword(s):
Silicon Nanowire Reconfigurable FET Unipolar Conduction Ambipolar Conduction Flash Lamp Annealing pn On-Current Symmetry Schottky Barrier
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-40733
Referenced by:
https://www.hzdr.de/publications/Publ-41584
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