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Data for "Gold implanted germanium photoswitch for cavity dumping of a free-electron laser"

Rana, Rakesh; Klopf, John Michael; Ciano, C.; Singh, Abhishek; Winnerl, Stephan; Schneider, Heike; Helm, Manfred; Pashkin, Oleksiy

Measurements were carried out in ELBE 113 c lab. Free electron laser (FEL) pulses with a wavelength ranging from 6 to 90 µm from the FELBE laser operating at its maximum power level were used. Photoswitching of Ge and Ge:Au samples were carried out using a 1 kHz Ti:Sapphire Amplifier system at 800 nm. The data used in the paper is arranged in subfolders 1, 2, and 3. The description is as follows
1. Scheme of the experiment (used in Figure 1 and shows the idea of the experiment)
2. FEL pulse picking traces from photoswitched Ge and Ge: Au samples were recorded using an oscilloscope with 1 GHz bandwidth (Keysight InfiniiVision DSOX4104A).
Relevance: This data is used in Figures 2 and 3. This measurement showed the photoswitching attributes in both reflection and transmission geometry for the Ge and Ge: Au samples and suitability of Ge:Au sample for efficient cavity dumping.
3. Photoinduced reflectivity measurements for the Ge: Au sample as a function of the time delay between FEL pulses and the pulses from a kHz amplifier system is recorded. The fluence required to couple out FEL wavelengths with an efficiency of at least 50 % reflectivity and Matlab scripts used for simulation of photoinduced reflectivity for the same FEL wavelengths.
Relevance: This data is used in Figure 4 and shows the fluence requirements of the Ge:Au photoswitch and also a faster recovery time of sub-ns, much shorter than the FEL pulsing period of 77ns.

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