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Data publication: Tuning the Electronic Characteristics of Monolayer MoS2-Based Transistors by Ion Irradiation: The Role of the Substrate

Fekri, Zahra; Chava, Phanish; Hlawacek, Gregor; Ghorbani Asl, Mahdi; Kretschmer, Silvan; Awan, Wajid; Koladi Mootheri, Vivek; Sycheva, Natalia; George, Antony; Turchanin, Andrey; Watanabe, Kenji; Taniguchi, Takashi; Helm, Manfred; Krasheninnikov, Arkady; Erbe, Artur

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    <dct:title>Data publication: Tuning the Electronic Characteristics of Monolayer MoS2-Based Transistors by Ion Irradiation: The Role of the Substrate</dct:title>
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    <dcat:keyword>defects</dcat:keyword>
    <dcat:keyword>FET</dcat:keyword>
    <dcat:keyword>first-principles calculations</dcat:keyword>
    <dcat:keyword>ion irradiation</dcat:keyword>
    <dcat:keyword>monolayer MoS2</dcat:keyword>
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    <dct:description>&lt;p&gt;This study explores defect engineering in 2D materials using ion beam irradiation to modify the electrical and optical properties with potential in advancing quantum electronics and photonics. Helium and neon ions ranging from 5 to 7.5 keV are employed to manipulate charge transport in monolayer molybdenum disulfide (MoS2). In situ electrical characterization occurs without vacuum breakage post-irradiation. Raman and photoluminescence spectroscopy quantify ion irradiation&amp;rsquo;s impact on MoS2. Small doses of helium ion irradiation enhance monolayer MoS2 conductivity in field-effect transistor geometry by inducing doping and substrate charging. Findings reveal a strong correlation between the electrical properties of MoS2 and the primary ion used, as well as the substrate on which the irradiation occurred. Using hexagonal boron nitride (h-BN) as a buffer layer between MoS2 flake and SiO2 substrate yields distinct alterations in electrical behavior subsequent to ion irradiation compared to the MoS2 layer directly interfacing with SiO2. Molecular dynamics simulations and density functional theory provide insight into experimental results, emphasizing substrate influence on measured electrical properties post-ion irradiation.&lt;/p&gt;</dct:description>
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Publication date:
June 11, 2024
DOI:
10.14278/rodare.3014

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Keyword(s):
defects FET first-principles calculations ion irradiation monolayer MoS2
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-39191
Referenced by:
10.1002/aelm.202400037, https://www.hzdr.de/publications/Publ-39152
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