Dataset Open Access

Data publication: Universal radiation tolerant semiconductor

Bektas, Umutcan; Chekhonin, Paul; Klingner, Nico; Hlawacek, Gregor

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{
  "abstract": "<p>EBSD data and irradiation parameters</p>", 
  "id": "2331", 
  "type": "dataset", 
  "title": "Data publication: Universal radiation tolerant semiconductor", 
  "DOI": "10.14278/rodare.2331", 
  "publisher": "Rodare", 
  "issued": {
    "date-parts": [
      [
        2023, 
        6, 
        9
      ]
    ]
  }, 
  "author": [
    {
      "family": "Bektas, Umutcan"
    }, 
    {
      "family": "Chekhonin, Paul"
    }, 
    {
      "family": "Klingner, Nico"
    }, 
    {
      "family": "Hlawacek, Gregor"
    }
  ]
}
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Publication date:
June 9, 2023
DOI:
10.14278/rodare.2331

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DOI 

10.14278/rodare.2331

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Keyword(s):
ion irradiation Ga2O3 phase transformation Polymorph EBSD
Related identifiers:
Cites:
10.17815/jlsrf-3-159
Identical to:
https://www.hzdr.de/publications/Publ-37095
Referenced by:
https://www.hzdr.de/publications/Publ-36900
Communities:
License (for files):
Creative Commons Attribution 4.0 International

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Version 1 10.14278/rodare.2331 Jun 9, 2023
Cite all versions? You can cite all versions by using the DOI 10.14278/rodare.2330. This DOI represents all versions, and will always resolve to the latest one. Read more.

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