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oai:rodare.hzdr.de:3935 2025-08-20T07:09:50Z openaire_data user-rodare user-ibc user-fwi

true 3.1 HZDR.RODARE 10.14278/rodare.3935 Vardhan, Vaishali School of Chemistry, University College Cork, Cork T12 YN60, Ireland; Environmental Research Institute, University College Cork, Cork T23 XE10, Ireland Biswas, Subhajit School of Chemistry, University College Cork, Cork T12 YN60, Ireland; Environmental Research Institute, University College Cork, Cork T23 XE10, Ireland Tsetseris, Leonidas Department of Physics, School of Applied Mathematical and Physical Sciences, National Technical University of Athens, Athens 15780, Greece Ghosh, Sayantan 0000-0003-1347-1365 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, 01328 Dresden, Germany; Technische Universität Dresden, Dresden 01069, Germany Echresh, Ahmad 0000-0002-2708-2718 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, 01328 Dresden, Germany; Technische Universität Dresden, Dresden 01069, Germany Hellebust, S. School of Chemistry, University College Cork, Cork T12 YN60, Ireland; Environmental Research Institute, University College Cork, Cork T23 XE10, Ireland Hübner, René 0000-0002-5200-6928 Georgiev, Yordan M. Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden Rossendorf, 01328 Dresden, Germany; Technische Universität Dresden, Dresden 01069, Germany Holmes, Justin D. School of Chemistry, University College Cork, Cork T12 YN60, Ireland; Environmental Research Institute, University College Cork, Cork T23 XE10, Ireland Rodare 2025 silicon nanowire junctionless transistor ambipolar device molecular doping density functional theory ammonia sensing UV-enhanced sensing 2025-08-14 en https://rodare.hzdr.de/record/3935 10.17815/jlsrf-3-159 https://www.hzdr.de/publications/Publ-41722 https://www.hzdr.de/publications/Publ-41694 10.14278/rodare.3934 https://rodare.hzdr.de/communities/fwi https://rodare.hzdr.de/communities/ibc https://rodare.hzdr.de/communities/rodare Restricted Access <p>The potential of adsorbed gaseous molecules to create shallow electronic states for thermally excited charge carrier transport<br> and to engineer silicon transistor properties has been largely overlooked compared to traditional substitutional impurities. This<br> paper successfully modifies the electrical properties of ambipolar silicon junctionless nanowire transistors (Si-JNTs) using the reducing properties of ammonia (NH3) for selective detection. Physisorption of NH3 induces a dual response in both p- and n-type conduction channels of ambipolar Si-JNTs, significantly altering current and key parameters, including the &ldquo;on&rdquo; current (Ion), threshold voltage (Vth), and mobility (&mu;). NH3 interaction increases conduction in the channel and decreases it in the p-channel, acting as an electron donor and hole trap, as supported by Density Functional Theory (DFT) calculations. This provides a pathway for charge transfer and &Prime;pseudo&Prime; molecular doping in ambipolar Si-JNTs. This NH3-mediated molecular doping and conduction modulation in Si transistor enabled, for the first time, the electrical detection of gaseous NH3 at room temperature across a wide concentration range (200 ppb to 50 ppm), achieving high sensitivity (200 ppb) and precise selectivity under ultraviolet (UV) light. UV illumination dynamically modulates current and reveals distinct sensing features in the pand n-channels of the dual-responsive Si JNTs. The ambipolar Si-JNT sensor exhibits a fast response time of 1.91 min for 0.8 ppm of NH3 in the hole conduction channel and a high sensitivity of 80% for 0.8 ppm of NH3 in the electron conduction channel. This dualchannel approach optimizes sensor performance by leveraging the most responsive parameters from each channel. Furthermore, the ambipolarity of Si-JNTs broadens the parameter space for developing a multivariate calibration model, enhancing the selectivity of Si-JNT sensors for NH3 detection</p>